Realized a flexible and radiations heavy resistent transistor

It comes from the space, or almost, a material for the construction of flexible transistors that will allow a new electronic devices production. That's what come up from a Northwestern University publication where the characteristics of the new material are illustrated.

Northwestern University research group has build a transistor that makes use of a new type of dielectric material called "SAND" or "Self-Assembled NanoDielectric". Prof. Tobin Marks, leader of the group, explained that to reach such an objective has been necessary follow an alternative way in silicon dioxide usage.

The objective was to create a material that would introduce specification that the silicon dioxide is not able to offer: flexibility, transparency and printable. Basic characteristics are a reduced thickness, an elevated insulating capability and the ability to stabilize electrons that move through the semi-conductor thanks to an elevated dielectric constant.

This material has also an elevated radiations resistance, getting NASA interests for a possible usage in spatial missions. SAND was tried last 22 March, when it has been applied to the International Spatial Station in order to verify radiations resistance. That SAND sample will stay one year on the station as a experiment conducted from Nasa to investigate material's behaviour in external space environment.

Tobin Marks has declared: "All remained amazed. These experiments showed that SAND has the potentialities to revolutionize the whole field. This type of transistors are not only good for spatial applications, but that represent an evident prove of their sturdiness."

Among the principal promises made by this new material there is the production price cut for solar cells, ultraflat display, mobile phones components with reduced dimensions and medical equipment. Maybe it will also utilized in RFID identifications field.

More informations at Northwestern University.